Radiation hardened by design techniques to mitigating P-hit single event transient

As technologies scale down in size, the single event effect has become a universal phenomenon. In this work, a new radiation hardened by design (RHBD) technique has been proposed to mitigating P-hit single event transient. This method is named here as the 3 transistor common drain (3TCD) method. With simulations of the inverter chain using a three-dimensional (3D) technology computer-aided design (TCAD) simulation tool, it has been found that this new 3TCD method has an obvious effect on the p-channel metal-oxide semiconductor field-effect transistor (PMOS FET) by mitigating single event transient (SET) pulse widths (WSET).