E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval
{"title":"19 SSE1固态电子和VLSI","authors":"E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval","doi":"10.1109/iceee.2006.251838","DOIUrl":null,"url":null,"abstract":"(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.","PeriodicalId":125310,"journal":{"name":"2006 3rd International Conference on Electrical and Electronics Engineering","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"19 SSE1 Solid-State Electronics and VLSI\",\"authors\":\"E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval\",\"doi\":\"10.1109/iceee.2006.251838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.\",\"PeriodicalId\":125310,\"journal\":{\"name\":\"2006 3rd International Conference on Electrical and Electronics Engineering\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 3rd International Conference on Electrical and Electronics Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iceee.2006.251838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 3rd International Conference on Electrical and Electronics Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iceee.2006.251838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.
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