陷阱对砷化镓辐射探测器性能的影响

A. Castaldini, A. Cavallini, L. Polenta, C. Canali, C. del Papa, F. Nava
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引用次数: 2

摘要

欧姆触点可能控制着载流子的注入,对LEC砷化镓粒子探测器的性能起着重要的作用。已经比较了接触特性,并将其与接触制备过程中产生的电活性缺陷和探测器效率联系起来。对电场分布进行了分析。光谱研究已经证明,接触制造过程显著影响陷阱密度,同时不改变它们的特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Trap influence on the performance of gallium arsenide radiation detectors
Ohmic contacts play an important role in the performance of LEC gallium arsenide particle detectors since they possibly control the injection of charge carriers. Contact characteristics have been compared and related to electrically active defects induced during contact preparation and to the detector efficiency. The electric field distribution has also been analyzed. Spectroscopic investigations have put into evidence that the contact fabrication process significantly influences the trap density whilst it does not change their signatures.
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