新型可变掺杂槽双栅高压TFT

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003163

S. Krishnan, E. M. Sankara Narayanan, Y.Z. Xu, F. Clough, M. M. De Souza, D. Flores, M. Vellvehí, J. Millán

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引用次数: 3

摘要

展示了一种新型的高性能双门控、玻璃兼容多晶硅HVTFT，其阻塞电压超过300 V。与偏移漏极(DG-OD)相比，该器件显示出一个数量级的on-state性能改进。这种双栅极器件的性能显著增强是由于从源极(控制栅极)到漏极(子栅极)通过减小尺寸的槽掺杂了偏移区域。

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Novel dual gate high voltage TFT with variable doping slot

A novel high performance dual gated, glass compatible polycrystalline silicon HVTFT with blocking voltage in excess of 300 V is demonstrated. This device shows an order of magnitude improvement in the on-state performance in comparison to its offset drain (DG-OD) counterpart. The significantly enhanced performance of this dual gate device is due to an offset region doped through slots of reducing dimensions from the source (control gate) to the drain (sub-gate).

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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