基于反转系数MOSFET模型的28nm CMOS基带TIA设计

2022 20th IEEE Interregional NEWCAS Conference (NEWCAS) Pub Date : 2022-06-19 DOI:10.1109/NEWCAS52662.2022.9842093

Léo Lançon, Hugo Vallée, G. Montoriol, Fabien Brunelli, T. Taris

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引用次数: 0

摘要

本文提出了一种汽车雷达接收机跨阻放大器尺寸的设计方法。在Enz-Krummenacher-Vittoz (EKV) MOSFET模型的基础上，提出了开发具有有限参数数量的小信号模型的基本方程，该模型可用于快速探索电路的不同设计优化。通过布局后仿真验证了该模型和方法。所设计的TIA增益为65 dBΩ，带宽为80 MHz，输入阻抗为74 Ω，输入参考噪声为50 yA2.Hz−1。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm

This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a small-signal model featuring a limited number of parameters, which can be exploited to quickly explore the different design optimums of a circuit. Post-layout simulations are presented to validate the model and the methodology. The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of 74 Ω and input-referred noise of 50 yA2.Hz−1.

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2022 20th IEEE Interregional NEWCAS Conference (NEWCAS)

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