{"title":"应用锁定热成像技术定位由可靠性失效机制引起的电活性缺陷","authors":"C. Schmidt, K. Wadhwa, A. Reverdy, E. Reinders","doi":"10.1109/IRPS.2013.6532027","DOIUrl":null,"url":null,"abstract":"Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography\",\"authors\":\"C. Schmidt, K. Wadhwa, A. Reverdy, E. Reinders\",\"doi\":\"10.1109/IRPS.2013.6532027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography
Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.