{"title":"一种高速应用的动态电流模式d触发器","authors":"M. Maiti, Anupama Paul, S. K. Saw, A. Majumder","doi":"10.1109/IEMENTech48150.2019.8981081","DOIUrl":null,"url":null,"abstract":"With the continuous growth of semiconductor technologies, the design of high-speed circuits is a need of the hour. Current Mode Logic (CML), a derivation from Emitter Coupled Logic (ECL) is such an approach with concerns present to be improvised. Targeting that, we have come up with a new design of dynamic CML to structure a power efficient D-Flipflop. The simulations are carried out for 90nm CMOS using Synopsys H-Spice platform at a supply voltage and operating frequency of 1.2V and 10GHz respectively. The device footprint reads an area requirement of 108.624 µm2 (16.045µm × 6.77µm). This design is noted to dissipate a very low power of 219.05uW and delay of as small as 31.30ps when driven with aperiodic data of 2.5GHz.","PeriodicalId":243805,"journal":{"name":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","volume":"94 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Dynamic Current Mode D-Flipflop for High Speed Application\",\"authors\":\"M. Maiti, Anupama Paul, S. K. Saw, A. Majumder\",\"doi\":\"10.1109/IEMENTech48150.2019.8981081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the continuous growth of semiconductor technologies, the design of high-speed circuits is a need of the hour. Current Mode Logic (CML), a derivation from Emitter Coupled Logic (ECL) is such an approach with concerns present to be improvised. Targeting that, we have come up with a new design of dynamic CML to structure a power efficient D-Flipflop. The simulations are carried out for 90nm CMOS using Synopsys H-Spice platform at a supply voltage and operating frequency of 1.2V and 10GHz respectively. The device footprint reads an area requirement of 108.624 µm2 (16.045µm × 6.77µm). This design is noted to dissipate a very low power of 219.05uW and delay of as small as 31.30ps when driven with aperiodic data of 2.5GHz.\",\"PeriodicalId\":243805,\"journal\":{\"name\":\"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)\",\"volume\":\"94 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMENTech48150.2019.8981081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 3rd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMENTech48150.2019.8981081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Dynamic Current Mode D-Flipflop for High Speed Application
With the continuous growth of semiconductor technologies, the design of high-speed circuits is a need of the hour. Current Mode Logic (CML), a derivation from Emitter Coupled Logic (ECL) is such an approach with concerns present to be improvised. Targeting that, we have come up with a new design of dynamic CML to structure a power efficient D-Flipflop. The simulations are carried out for 90nm CMOS using Synopsys H-Spice platform at a supply voltage and operating frequency of 1.2V and 10GHz respectively. The device footprint reads an area requirement of 108.624 µm2 (16.045µm × 6.77µm). This design is noted to dissipate a very low power of 219.05uW and delay of as small as 31.30ps when driven with aperiodic data of 2.5GHz.