{"title":"Ga和sn掺杂ZnO纳米线/p-Si异质结用于紫外光传感的比较研究","authors":"R. Saha, A. Karmakar, S. Chattopadhyay","doi":"10.1109/ISDCS.2018.8379683","DOIUrl":null,"url":null,"abstract":"Vertically oriented undoped, Ga-doped and Sn-doped ZnO nanowires are grown by using novel double step chemical bath deposition (CBD) technique. The nanowire morphology, crystallite quality, energy bandgap, and UV-visible absorption properties are investigated by employing FESEM, XRD and UV-vis measurements. Comparative photoresponse of the ZnO nanowire/p-Si heterojunction photodiodes is studied by measuring the photo-to-dark current ratios, self-powered photo-switching behavior and intensity-dependant photocurrent at zero applied bias. Ga-doped ZnO nanowires/p-Si heterojunction photodiode exhibits relatively higher photocurrent while the Sn-doped devices show faster photoswitching operation. An excellent photoresponse with the linear dependency of photocurrent on the incident UV-intensity has been observed in the Sn-doped photodiodes.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Comparative investigation of Ga- and Sn-doped ZnO nanowires/p-Si heterojunctions for UV-photo sensing\",\"authors\":\"R. Saha, A. Karmakar, S. Chattopadhyay\",\"doi\":\"10.1109/ISDCS.2018.8379683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertically oriented undoped, Ga-doped and Sn-doped ZnO nanowires are grown by using novel double step chemical bath deposition (CBD) technique. The nanowire morphology, crystallite quality, energy bandgap, and UV-visible absorption properties are investigated by employing FESEM, XRD and UV-vis measurements. Comparative photoresponse of the ZnO nanowire/p-Si heterojunction photodiodes is studied by measuring the photo-to-dark current ratios, self-powered photo-switching behavior and intensity-dependant photocurrent at zero applied bias. Ga-doped ZnO nanowires/p-Si heterojunction photodiode exhibits relatively higher photocurrent while the Sn-doped devices show faster photoswitching operation. An excellent photoresponse with the linear dependency of photocurrent on the incident UV-intensity has been observed in the Sn-doped photodiodes.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative investigation of Ga- and Sn-doped ZnO nanowires/p-Si heterojunctions for UV-photo sensing
Vertically oriented undoped, Ga-doped and Sn-doped ZnO nanowires are grown by using novel double step chemical bath deposition (CBD) technique. The nanowire morphology, crystallite quality, energy bandgap, and UV-visible absorption properties are investigated by employing FESEM, XRD and UV-vis measurements. Comparative photoresponse of the ZnO nanowire/p-Si heterojunction photodiodes is studied by measuring the photo-to-dark current ratios, self-powered photo-switching behavior and intensity-dependant photocurrent at zero applied bias. Ga-doped ZnO nanowires/p-Si heterojunction photodiode exhibits relatively higher photocurrent while the Sn-doped devices show faster photoswitching operation. An excellent photoresponse with the linear dependency of photocurrent on the incident UV-intensity has been observed in the Sn-doped photodiodes.
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