BEOL互连创新:3nm及以上节点的材料、工艺和系统协同优化

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2023-06-11 DOI:10.23919/VLSITechnologyandCir57934.2023.10185299

G. Thareja, A. Pal, Xingye Wang, S. Dag, S. You, Shashank Sharma, Qing Zhu, C. L. Cervantes, Shinjae Hwang, Matthew Spuller, B. Ng, Pradeep S. Kumar, N. Tam, M. Gage, S. Deshpande, Zhiyuan Wu, A. Jansen, Liton Dey, Feng Chen, Xianjin Xie, K. Kashefizadeh, V. Reddy, Andy Lo, Zhebo Chen, S. Huey, Jianshe Tang, He Ren, M. Naik, Brian Brown, S. Kesapragada, Buvna Ayyagari-Sangamalli, E. Bazizi, Xianmin Tang

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引用次数: 0

摘要

我们采用集成选择性势垒铜势垒种子(CuBS)工艺、退火和化学机械平化(CMP)技术，为先进技术节点提供了一种新型的后端线(BEOL)铜互连集成技术。电学测试(电阻、可靠性)与材料到系统协同优化(MSCO™)模拟相结合，证实了3nm及以上技术节点的显著功率性能面积(PPA)增益。

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BEOL Interconnect Innovation: Materials, Process and Systems Co-optimization for 3nm Node and Beyond

We present novel back-end-of-line (BEOL) copper interconnect integration for advanced technology nodes using integrated selective barrier copper barrier seed (CuBS) process, annealing and chemical mechanical planarization (CMP). Electrical tests (resistance, reliability) combined with Materials-to-Systems Co-Optimization (MSCO™) simulations confirm significant power-performance-area (PPA) gains for 3nm technology node and beyond.

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来源期刊

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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