A combined model for Si-based resonant interband tunneling diodes grown on SOI

In this paper, we present a combined model which unites both the small and large signal models for resonant interband tunneling diodes (RITD) grown on silicon-on-insulator (SOI) substrates. In this combined model, the dependent current source, I/sub j/(V), is from the large signal model while R, and C/sub j/(V) are obtained from the small signal model. The combined model was then implemented using ADS software. A transient simulation was performed to simulate the response of the RITD with a serially connected 50 /spl mu/H inductor to a ramped voltage from 0 V to 1 V in 0.1 ms. The simulation results show strong oscillations when the diode is biased in its negative differential resistance region (NDR) during DC measurements, which would result in the commonly observed plateau in the NDR region, where the needle probe acts as an inductor.