具有+27 dBm阻滞剂容限的250 nm GaN n路滤波器IC

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751015

C. Thomas, T. Quach, I. Telliez, T. Nakatani, D. Kimball, L. Larson

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引用次数: 3

摘要

一个完全集成的250纳米氮化镓带通n路滤波器提出了高阻滞剂容限应用。从200 MHz到1.9 GHz的4相分流架构测量表明，宽带可调谐带通响应，插入损耗小于5 dB，带外抑制为18 dB，带内阻断器B1dB为+18 dBm，带外阻断器B1dB为+27 dBm。

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A 250 nm GaN N-Path Filter IC with +27 dBm Blocker Tolerance

A fully integrated 250 nm GaN bandpass N-path filter is presented for high blocker tolerance applications. Measurements from 200 MHz to 1.9 GHz of a 4-phase shunt architecture demonstrate a broadband tunable bandpass response with insertion loss less than 5 dB, out-of-band rejection of 18 dB, in-band blocker B1dB of +18 dBm, and out-of-band blocker B1dB of +27 dBm.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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