{"title":"一个1.2V 84dB 8mW时间交错采样和保持电路在90 nm CMOS","authors":"A. Zjajo","doi":"10.1109/EDSSC.2013.6628204","DOIUrl":null,"url":null,"abstract":"This paper reports design, efficiency and measurement results of time interleaved sample and hold circuit based on closed loop switched capacitor technique. The prototype sample and hold with 84 dB dynamic range at 120 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 8 mW at 1.2 V power supply and measures 0.22 mm2.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.2V 84dB 8mW time-interleaved sample and hold circuit in 90 nm CMOS\",\"authors\":\"A. Zjajo\",\"doi\":\"10.1109/EDSSC.2013.6628204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports design, efficiency and measurement results of time interleaved sample and hold circuit based on closed loop switched capacitor technique. The prototype sample and hold with 84 dB dynamic range at 120 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 8 mW at 1.2 V power supply and measures 0.22 mm2.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2V 84dB 8mW time-interleaved sample and hold circuit in 90 nm CMOS
This paper reports design, efficiency and measurement results of time interleaved sample and hold circuit based on closed loop switched capacitor technique. The prototype sample and hold with 84 dB dynamic range at 120 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 8 mW at 1.2 V power supply and measures 0.22 mm2.