BSI晶圆减薄工艺中的HNA湿法蚀刻优化

Pengfei Lyu, Min Xiang, Jia Xu, Tianhao Zhang, Quan Zhang, Qingpeng Zhao
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引用次数: 0

摘要

为了实现更高的量子效率和图像传感器的灵敏度,将FSI的金属线和光敏区颠倒,开发了反向照明(BSI)。在带来好处的同时,这项新技术也带来了一系列新的挑战。其中,如何实现晶圆均匀减薄已成为湿法清洁工艺的关键问题。本文重点研究了湿法蚀刻工艺的优化,该工艺在晶圆减薄工艺中的应用。在先进的Lam Research SP323单晶圆清洁硬件和软件的帮助下,可以在长时间运行中实现改进的晶圆稀释性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
HNA Wet Etching Optimization in Wafer Thinning of BSI Process
In order to achieve higher quantum efficiency and sensitivity of image sensor, the Backside-Illumination (BSI) has been developed by turning FSI's metal wiring and photosensitive area upside down. Together with the benefits, a series of new challenges are also brought along with this new technology. Among them, how to achieve uniform wafer thinning has become a critical issue for wet clean process. This paper focuses on wet etching optimization of HNA, the chemical applied in wafer thinning process. With help of advanced Lam Research SP323 single wafer clean hardware and software, an improved wafer thinning performance throughout long-time running can be achieved.
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