氧缺乏的氮化硅纳米层界面

2018 16th Biennial Baltic Electronics Conference (BEC) Pub Date : 2018-10-01 DOI:10.1109/BEC.2018.8600964

Y. Dekhtyar, L. Avotina, Gennady Enichek, M. Romanova, B. Schmidt, E. Shulzinger, Hermanis Sorokins, A. Vilken, A. Zaslavski

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引用次数: 1

摘要

采用低压化学气相沉积方法，逐层沉积了总厚度为60 nm的多层氮化硅。与单层Si3N4相比，多层Si3N4界面处的氧浓度降低了1 / 3。这降低了氧阱电活性中心的密度，提高了多层氮化硅电介质纳米电容器的质量。

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Interface of Silicon Nitride Nanolayers with Oxygen Deficiency

Multilayer Si3N4 consisting of Si3N4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si3N4, the multilayer Si3N4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si3N4 dielectric.

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2018 16th Biennial Baltic Electronics Conference (BEC)

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