H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran
{"title":"热处理改善n-Si(100)上过滤阴极真空弧非晶碳膜的电学特性","authors":"H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran","doi":"10.1109/RSM.2017.8069164","DOIUrl":null,"url":null,"abstract":"Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum arc (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 8000C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.","PeriodicalId":215909,"journal":{"name":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modified electrical characteristics of filtered cathodic vacuum arc amorphous carbon film on n-Si (100) by heat treatment\",\"authors\":\"H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran\",\"doi\":\"10.1109/RSM.2017.8069164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum arc (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 8000C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.\",\"PeriodicalId\":215909,\"journal\":{\"name\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2017.8069164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2017.8069164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modified electrical characteristics of filtered cathodic vacuum arc amorphous carbon film on n-Si (100) by heat treatment
Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum arc (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 8000C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.