热处理改善n-Si(100)上过滤阴极真空弧非晶碳膜的电学特性

H. Pham, A. Holland, Huy L. Nguyen, J. Partridge, H. Tran
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引用次数: 0

摘要

碳同素异形体因其新颖的应用而受到广泛关注。本文研究了用过滤阴极真空电弧(FCVA)沉积法在n-Si衬底上沉积的非晶碳膜经过高温处理后的电学行为。XPS数据也用于进一步了解材料。建议在1000V下沉积FCVA非晶碳膜,并在8000C下进行沉积后热处理,与总电阻为1200Ω的n-Si衬底相比,总电阻为2000Ω的其他设置可以实现更好的欧姆接触。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modified electrical characteristics of filtered cathodic vacuum arc amorphous carbon film on n-Si (100) by heat treatment
Carbon allotropes are of great interest recently due to theirs novel applications. This paper examines the electrical behavior of amorphous carbon film, deposited on n-Si substrate by filtered cathodic vacuum arc (FCVA) deposition methodology, after treating it at high temperature. XPS data is also used to further understand the material. FCVA amorphous carbon film deposited at 1000V and post deposition heat-treated at 8000C is suggested to achieve a better Ohmic contact to n-Si substrates with total resistance 1200Ω compared to other settings with total resistance up to 2000Ω.
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