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引用次数: 40
摘要
在标准的0.35 μ m CMOS工艺中实现了基准电压。通过完全抑制载流子迁移率的温度依赖性，实现了12 ppm/℃的温度系数。线路灵敏度为0.46% /V，在80℃时测量的最大电源电流为130 nA。100hz和10mhz时的PSSR分别为- 59db和- 52db
A 300 nW, 12 ppm//spl deg/C Voltage Reference in a Digital 0.35 /spl mu/m CMOS Process
A voltage reference has been implemented in a standard 0.35 mum CMOS process. A temperature coefficient of 12 ppm/degC is achieved in virtue of a complete suppression of the temperature dependence of the carrier mobility. The line sensitivity is 0.46 %/V and the maximum supply current, measured at 80degC, is 130 nA. The PSSR at 100 Hz and 10 MHz is -59 dB and -52 dB, respectively
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