进化设计电路的硅验证

A. Stoica, R. Zebulum, Xin Guo, D. Keymeulen, M. I. Ferguson, V. Duong
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引用次数: 8

摘要

在此之前,还没有人对进化设计的拓扑电路进行硅制造和表征,留下了关于进化设计方法可行性的悬而未决的问题,以及在硬件中实现时这种设计的高性能、健壮性或可移植性究竟有多高。本文首次报道了在模拟中进化的电路的硅实现。在0.5微米CMOS工艺中发展和制造了几个电路。本文的重点是逻辑门在晶体管水平上进化的结果。它讨论了为增加稳健和便携设计的机会而采取的步骤,总结了基于芯片测量的表征测试的结果,并对性能与模拟的比较进行了评论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon validation of evolution-designed circuits
No silicon fabrication and characterization of circuits with topologies designed by evolution has been done before, leaving open questions about the feasibility of the evolutionary design approach, as well as on how high performance, robust, or portable such designs could really be when implemented in hardware. This paper is the first to report on a silicon implementation of circuits evolved in simulation. Several circuits were evolved and fabricated in a 0.5-micron CMOS process. This paper focuses on results of logical gates evolved at a transistor level. It discusses the steps taken in order to increase the chances of robust and portable designs, summarizes the results of characterization tests based on chip measurements, and comments on the performance comparing to simulations.
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