CMOS技术在模拟电路设计中的优点评估

M. Vertregt, P. Scholtens
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引用次数: 18

摘要

漏极电流、跨导、电流因数、电容等关键器件参数作为CMOS技术节点的功能,与典型模拟电路级性能标准相关联。随后,对模数转换器构建块的速度和功率影响进行了估计。由于扩展到深亚微米技术节点,预计显著的功率效率将得到改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Assessment of the merits of CMOS technology scaling for analog circuit design
Key device parameters such as drain current, transconductance, current factor, capacitance, etc. are linked to typical analog circuit level performance criteria, as a function of the CMOS technology node. Subsequently, speed and power implications for an analog-to-digital converter building block are estimated. Significant power efficiency improvements are predicted as a result of scaling to deep sub-micron technology nodes.
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