Millimeter wave transformer coupled low-power and broadband power amplifiers

This paper presents two millimeter wave PAs realized in a 130 nm CMOS process. The power amplifier adopts transformer and transmission line matching topology which achieves small area and broadband. One power amplifier focus on low power and the other focus on broadband. The low-power power amplifier operates from 1.2 V supply with 10 dB gain at 62 GHz, and dissipates 58 mW DC power. Reverse isolation is better than 39 dB from 50 GHz to 75 GHz. The measured 3 dB bandwidth of the broadband power amplifier is 20 GHz (from 47 GHz to 67 GHz); the measured maximum gain is 8.6 dB; output 1 dB compression power is 9.36 dBm and consumes 90 mA current from 1.2 V DC supply. Including its pads, the PA occupies a compact chip area of 0.318 mm2, and without pads, the PA occupies 0.141 mm2.