半绝缘GaAs衬底上Ge薄膜的表面结构和电性能

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003222

V. F. Mitin, V. V. Kholevchuk, R. Konakova, E. Venger, V. A. Odarich, O. Rudenko, M. Semen'ko, M. V. Khimenko

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引用次数: 2

摘要

研究了半绝缘GaAs衬底上Ge薄膜的结构、电学和光学性能。采用真空热蒸发法在半绝缘GaAs(100)衬底上制备了锗薄膜。在Ge沉积过程中，衬底温度在120 ~ 450℃之间变化。膜厚为0.8 ~ 1.5 /spl mu/m。x射线和电子衍射、原子力显微镜(AFM)、多角度椭偏和磁阻(霍尔效应、电阻和磁阻)测量都被用于这些研究。

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Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates

Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 /spl deg/C. The film thicknesses were varied from 0.8 up to 1.5 /spl mu/m. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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