多晶硅中的1/f噪声与薄片电阻类似于多晶硅电阻和au层

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356565

L. Vandamme, H. Casier

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引用次数: 28

摘要

研究了多晶电阻中1/f噪声与片电阻的关系。分析是基于胡格的经验关系。1/f噪声由S/sub R//R/sup 2/=C/sub us//WLf给出。比较了聚硅、硅钛化、金属au层和RuO/sub /基厚膜电阻器的实验结果。结果表明:C/sub - us/=KR/sub - sh/与K=/spl alpha/q/spl mu/(最低值为5/spl times/10/sup -13/ /spl mu/m/sup 2///spl Omega/)的关系是相似的。我们解释了P和B掺杂样品之间的1/f噪声差异以及C/sub /和片电阻R/sub sh/之间线性依赖关系的偏差。

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The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers

We investigated the dependence of 1/f noise on sheet resistance in poly crystalline resistors. The analysis is based on Hooge's empirical relation. The 1/f noise is given by S/sub R//R/sup 2/=C/sub us//WLf. Experimental results on poly-Si are compared with results on poly-SiGe, Ti-silicided poly-Si, metal Au-layers and RuO/sub 2/ based thick film resistors. This review shows that the results are similar and are well described by the relation: C/sub us/=KR/sub sh/ with K=/spl alpha/q/spl mu/ (lowest value 5/spl times/10/sup -13/ /spl mu/m/sup 2///spl Omega/). We explain the difference in 1/f noise between P and B doped samples and deviations from the linear dependence between C/sub us/ and sheet resistance R/sub sh/.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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