耦合器件的周期性稳态分析与电路仿真

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871215

Yutao Hu, K. Mayaram

{"title":"耦合器件的周期性稳态分析与电路仿真","authors":"Yutao Hu, K. Mayaram","doi":"10.1109/SISPAD.2000.871215","DOIUrl":null,"url":null,"abstract":"A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Periodic steady-state analysis for coupled device and circuit simulation\",\"authors\":\"Yutao Hu, K. Mayaram\",\"doi\":\"10.1109/SISPAD.2000.871215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

提出了一种基于耦合器件和电路模拟器的时域射击方法，适用于射频电路的精确仿真。该模拟器支持二极管、bjt和mosfet的精确数值模型。这些与加速稳态方法相结合，可以准确有效地进行射频电路的稳态仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Periodic steady-state analysis for coupled device and circuit simulation

A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

自引率

0.00%

发文量