原位CCVD生长cnt用于场效应功率器件的可行性研究

7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2012-05-16 DOI:10.1109/DTIS.2012.6232952

Martin Keyn, P. Wessely, Frank Wessely, L. Rispal, Johannes Palm, U. Schwalke

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引用次数: 0

摘要

本文研究了碳纳米管(cnt)在电力领域应用的可行性。基于催化化学气相沉积(CCVD)方法制造数千个碳纳米管场效应晶体管(cntfet)的工艺，我们将证明cntfet能够提供足够高的电流来驱动发光二极管(LED)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Feasibility study on in situ CCVD grown CNTs for field-effect power device applications

In this paper we investigate the feasibility of carbon nanotubes (CNTs) for power applications. On the basis of a process which fabricates thousands of carbon nanotube field-effect transistors (CNTFETs) by means of catalytic chemical vapor deposition (CCVD) we will show that CNTFETs are capable to provide a sufficiently high current to drive a light-emitting diode (LED).

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7th International Conference on Design & Technology of Integrated Systems in Nanoscale Era

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