{"title":"超重掺杂n型砷化镓中较高最小值对物理参数的影响","authors":"M. Zivanov, L. Zivanov, J. Jovović","doi":"10.1109/SMICND.1996.557395","DOIUrl":null,"url":null,"abstract":"In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs\",\"authors\":\"M. Zivanov, L. Zivanov, J. Jovović\",\"doi\":\"10.1109/SMICND.1996.557395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs
In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.
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