嵌入式DRAM技术:过去、现在和未来

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786044

H. Takato, H. Koike, T. Yoshida, H. Ishiuchi

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引用次数: 4

摘要

本文回顾了有关嵌入式DRAM的问题和发展趋势，并对0.5 /spl mu/m, 0.35 /spl mu/m和0.25 /spl mu/m代的实际实现进行了回顾。并讨论了嵌入式DRAM技术的未来发展方向，包括MOSFET结构、存储单元、工艺成本和性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Embedded DRAM technology: past, present and future

Issues and development trends with regard to embedded DRAM are reviewed with real implementations for 0.5 /spl mu/m, 0.35 /spl mu/m and 0.25 /spl mu/m generations. Future directions of the embedded DRAM technologies, including MOSFET structure, memory cells, process cost and performance, are also discussed.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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