Passive evaluation of surface and bulk ionic deposition from resist removal using surface photovoltage

In this paper we report on the application of optical surface photovoltage (SPV) to both quantify and qualify both surface and bulk effects of transition and alkaline metals deposited from photoresist in CZ P-type silicon. Using standard and specially prepared 1.2 /spl mu/ resist chemistry, we will demonstrate systematically that specific ions can affect surface charge and minority carrier lifetime. We will also show how the technique can be used for nondestructive, in-line assessment of resist-deposited contaminant metals.