6位1.6GS/s ADC,低输入电容,采用0.18µm CMOS

Chun-Chieh Chen, Yu-Lun Chung, C. Chiu
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引用次数: 0

摘要

本文提出了一种新颖的低输入电容闪存模数转换器(ADC)。利用所提出的分布式跟踪保持预比较器(thpc)架构,可以显著降低ADC前端采样子电路的负载容量,从而提高运算速度。在标准的0.18µm CMOS工艺中,实现了一个1.6GS/s的6位闪存ADC,以证明所提出的分布式THPC架构的可行性。所提出的flash ADC每个输入端口的等效输入电容仅为400fF,是一个易于驱动的接口。此外,在编码器中插入时钟时序缓冲器以加快所提出的闪存ADC的操作速度。布局后仿真结果表明,该ADC在1.6GS/s、793.8MHz输入信号频率下的SNDR为35.81dB,即5.66 ENOB。建议的ADC在全工作速度下从1.8 v电源消耗300mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
6-bit 1.6GS/s ADC with low input capacitance in a 0.18µm CMOS
This work presents a novel flash analog-to-digital converter (ADC) with low input capacitance. Utilizing the proposed distributed track-and-hold pre-comparators (THPCs) architecture, the loading capacitances of the ADC front-end sampling sub-circuits can be markedly reduced, thereby improving operation speed. In a standard 0.18µm CMOS process, a 1.6GS/s 6-bit flash ADC is implemented to demonstrate the feasibility of the proposed distributed THPC architecture. The equivalent input capacitance of each input port of the proposed flash ADC is only 400fF, which is an easily driven interface. Furthermore, clocked timing buffers are inserted in the encoder to accelerate the operational speed of the proposed flash ADC. Post-layout simulation results demonstrate that the proposed ADC achieves an SNDR of 35.81dB, which is 5.66 ENOB at 1.6GS/s with a 793.8MHz input signal frequency. The proposed ADC consumes 300mW from a 1.8-V supply at full operating speed.
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