{"title":"用于射频应用的裁剪逻辑CMOS","authors":"J. Burghartz","doi":"10.1109/VTSA.2001.934505","DOIUrl":null,"url":null,"abstract":"The radio-frequency (RF) potential of logic CMOS is assessed in this paper. Steps towards an optimum RF performance are explained. Devices are optimized for the frequency responses (f/sub T/ and f/sub max/), the minimum noise figure (F/sub min/), and the 1/f-noise based on device layout, bias conditions, and type of gate dielectric. Those steps are verified through a detailed study of IBM's 0.18 /spl mu/m CMOS logic technology. The identification of high RF performance of logic CMOS technology points out the advantage over dedicated RF CMOS technology.","PeriodicalId":388391,"journal":{"name":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Tailoring logic CMOS for RF applications\",\"authors\":\"J. Burghartz\",\"doi\":\"10.1109/VTSA.2001.934505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The radio-frequency (RF) potential of logic CMOS is assessed in this paper. Steps towards an optimum RF performance are explained. Devices are optimized for the frequency responses (f/sub T/ and f/sub max/), the minimum noise figure (F/sub min/), and the 1/f-noise based on device layout, bias conditions, and type of gate dielectric. Those steps are verified through a detailed study of IBM's 0.18 /spl mu/m CMOS logic technology. The identification of high RF performance of logic CMOS technology points out the advantage over dedicated RF CMOS technology.\",\"PeriodicalId\":388391,\"journal\":{\"name\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2001.934505\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2001.934505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The radio-frequency (RF) potential of logic CMOS is assessed in this paper. Steps towards an optimum RF performance are explained. Devices are optimized for the frequency responses (f/sub T/ and f/sub max/), the minimum noise figure (F/sub min/), and the 1/f-noise based on device layout, bias conditions, and type of gate dielectric. Those steps are verified through a detailed study of IBM's 0.18 /spl mu/m CMOS logic technology. The identification of high RF performance of logic CMOS technology points out the advantage over dedicated RF CMOS technology.