Q.F. Wang, K. Maex, S. Kubicek, R. Jonckheere, B. Kerkwijk, R. Verbeeck, S. Biesemans, K. De Meyer
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New CoSi/sub 2/ SALICIDE technology for 0.1 /spl mu/m processes and below
A new CoSi/sub 2/ salicide technology with thin Ti capping layer has been developed to improve the formation and thermal stability of sub-0.1 /spl mu/m CoSi/sub 2//Poly stacks. Previously both Co/Ti and conventional processes have been used successfully to produce 0.1 /spl mu/m lines. However, the former technique has a wider process window to obtain uniform silicide films reproducibly.
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