K. Rezzoug, F. Ducroquet, G. Guillot, L. Giraudet, J.P. Praseuth
{"title":"al /sub 48/In深圈闭表征。/sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As异质结构","authors":"K. Rezzoug, F. Ducroquet, G. Guillot, L. Giraudet, J.P. Praseuth","doi":"10.1109/SIM.1996.571102","DOIUrl":null,"url":null,"abstract":"Electron traps in AlInAs/In/sub .52/(Ca/sub 1-x/Al/sub x/)/sub .48/As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and ternary layers respectively. Both these levels are supposed to be intrinsic defects from the same origin. Another defect at E/sub c/-0.4 eV is detected at the AlInAs/InCaAlAs interface. The concentration of this trap is found to be non uniformly distributed on the wafer and possible impurity contamination is suggested.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Deep trap characterization of Al./sub 48/In./sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As heterostructures\",\"authors\":\"K. Rezzoug, F. Ducroquet, G. Guillot, L. Giraudet, J.P. Praseuth\",\"doi\":\"10.1109/SIM.1996.571102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron traps in AlInAs/In/sub .52/(Ca/sub 1-x/Al/sub x/)/sub .48/As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and ternary layers respectively. Both these levels are supposed to be intrinsic defects from the same origin. Another defect at E/sub c/-0.4 eV is detected at the AlInAs/InCaAlAs interface. The concentration of this trap is found to be non uniformly distributed on the wafer and possible impurity contamination is suggested.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deep trap characterization of Al./sub 48/In./sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As heterostructures
Electron traps in AlInAs/In/sub .52/(Ca/sub 1-x/Al/sub x/)/sub .48/As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and ternary layers respectively. Both these levels are supposed to be intrinsic defects from the same origin. Another defect at E/sub c/-0.4 eV is detected at the AlInAs/InCaAlAs interface. The concentration of this trap is found to be non uniformly distributed on the wafer and possible impurity contamination is suggested.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
