超低功耗22nm自振荡电压倍频器与动态漏阻逻辑

Sora Kato, Guowei Chen, K. Niitsu
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引用次数: 0

摘要

本文提出了一种低功耗自振荡倍频器(SOVD)的结构。在提出的SOVD结构中,将存在于SOVD旧结构中的逆变器替换为动态泄漏抑制逻辑逆变器,以降低功耗。在输入电压为300 $\mathbf{mV}$的条件下进行仿真时,可以减小漏电流和振荡频率,从而实现极低的功耗。输入电压转换效率为89.5%。功率效率约为传统SOVD的7倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Ultra-Low Power 22 nm Self-Oscillating Voltage Doubler With Dynamic Leakage-Suppression Logic
This paper presents a new structure of a self-oscillating voltage doubler (SOVD) that has a very low power. In the proposed SOVD structure, the inverters present in the old structure of an SOVD are replaced with a dynamic leakage-suppression logic inverter to reduce power consumption. When simulated under the condition of an input voltage of 300 $\mathbf{mV}$, the leakage current and oscillation frequency can be reduced, resulting in extremely low power consumption. The input voltage conversion efficiency was 89.5%. The power efficiency was about 7 times higher than that of a conventional SOVD.
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