在10nm以下的节点应用中，使用干蚀刻方法去除PMMA对PS的选择性

2015 China Semiconductor Technology International Conference Pub Date : 2015-03-15 DOI:10.1109/CSTIC.2015.7153384

A. Sarrazin, P. Pimenta-Barros, N. Possémé, S. Barnola, A. Gharbi, M. Argoud, R. Tiron, C. Cardinaud

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引用次数: 1

摘要

嵌段共聚物(BCP)的定向自组装(DSA)是最有前途的替代光刻技术之一，用于10纳米以下节点。本文提出了等离子体刻蚀法选择性去除聚甲基丙烯酸甲酯的研究。这一挑战要求两种聚合物之间具有良好的选择性。我们在毯状晶圆片上开发的最好的化学物质已经在圆柱形和层状晶圆片上进行了测试。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PMMA removal selectivity to PS using dry etch approach for sub-10nm node applications

Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising alternative lithography techniques for sub-10 nm nodes. In this paper, we propose to study PMMA removal selectively to PS by plasma etching. This challenge requires a good selectivity between both polymers. Our best chemistries developed on blanket wafers have been tested on cylindrical and lamellar patterned wafers.

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2015 China Semiconductor Technology International Conference

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