R. Laffont, P. Masson, P. Canet, B. Delsuc, R. Bouchakour, J. Mirabel
{"title":"新福勒诺德海姆电流测定在EEPROM细胞瞬态测量","authors":"R. Laffont, P. Masson, P. Canet, B. Delsuc, R. Bouchakour, J. Mirabel","doi":"10.1109/ESSDERC.2003.1256813","DOIUrl":null,"url":null,"abstract":"In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. transient analysis must improve the tunneling current modeling which is major parameter in the EEPROM cell behavior. Moreover our approach can be use for the verification of the injection current in case of write or erase cell operation disturb.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"New Fowler Nordheim current determination in EEPROM cell from transient measurements\",\"authors\":\"R. Laffont, P. Masson, P. Canet, B. Delsuc, R. Bouchakour, J. Mirabel\",\"doi\":\"10.1109/ESSDERC.2003.1256813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. transient analysis must improve the tunneling current modeling which is major parameter in the EEPROM cell behavior. Moreover our approach can be use for the verification of the injection current in case of write or erase cell operation disturb.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Fowler Nordheim current determination in EEPROM cell from transient measurements
In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. transient analysis must improve the tunneling current modeling which is major parameter in the EEPROM cell behavior. Moreover our approach can be use for the verification of the injection current in case of write or erase cell operation disturb.