具有扩散氧化铝绝缘层的溶液型铟锌氧化物薄膜晶体管

2018 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 1900-01-01 DOI:10.23919/ELINFOCOM.2018.8330674

Namgyung Hwang, Yooseong Lim, Se-Hyeong Lee, Jeong Seok Lee, M. Yi

{"title":"具有扩散氧化铝绝缘层的溶液型铟锌氧化物薄膜晶体管","authors":"Namgyung Hwang, Yooseong Lim, Se-Hyeong Lee, Jeong Seok Lee, M. Yi","doi":"10.23919/ELINFOCOM.2018.8330674","DOIUrl":null,"url":null,"abstract":"This paper introduces solution-processed Aluminum Oxide (AlOx) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlOx solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.","PeriodicalId":413646,"journal":{"name":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer\",\"authors\":\"Namgyung Hwang, Yooseong Lim, Se-Hyeong Lee, Jeong Seok Lee, M. Yi\",\"doi\":\"10.23919/ELINFOCOM.2018.8330674\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces solution-processed Aluminum Oxide (AlOx) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlOx solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.\",\"PeriodicalId\":413646,\"journal\":{\"name\":\"2018 International Conference on Electronics, Information, and Communication (ICEIC)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Electronics, Information, and Communication (ICEIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ELINFOCOM.2018.8330674\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Electronics, Information, and Communication (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ELINFOCOM.2018.8330674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了溶液法制备的氧化铝扩散层诱导氧化铟锌薄膜晶体管(TFTs)。固定IZO溶液的摩尔比，In: Zn = 3:2，改变AlOx溶液的摩尔浓度。我们利用铝的倾向来控制IZO膜的氧空位，捕获氧空位并与氧原子形成强键。因此，氧化铝扩散层溶液处理的IZO tft具有更好的稳定性和性能等器件特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer

This paper introduces solution-processed Aluminum Oxide (AlOx) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlOx solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 International Conference on Electronics, Information, and Communication (ICEIC)

自引率

0.00%

发文量