使用22FFL FinFET技术的12v应用的可靠性表征

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9128314

C. Su, M. Armstrong, S. Chugh, M. El-tanani, Hannes Greve, Hai Li, M. Maksud, Benjamin Orr, C. Perini, J. Palmer, L. Paulson, S. Ramey, J. Waldemer, Yang Yang, D. Young

{"title":"使用22FFL FinFET技术的12v应用的可靠性表征","authors":"C. Su, M. Armstrong, S. Chugh, M. El-tanani, Hannes Greve, Hai Li, M. Maksud, Benjamin Orr, C. Perini, J. Palmer, L. Paulson, S. Ramey, J. Waldemer, Yang Yang, D. Young","doi":"10.1109/IRPS45951.2020.9128314","DOIUrl":null,"url":null,"abstract":"The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"67 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology\",\"authors\":\"C. Su, M. Armstrong, S. Chugh, M. El-tanani, Hannes Greve, Hai Li, M. Maksud, Benjamin Orr, C. Perini, J. Palmer, L. Paulson, S. Ramey, J. Waldemer, Yang Yang, D. Young\",\"doi\":\"10.1109/IRPS45951.2020.9128314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.\",\"PeriodicalId\":116002,\"journal\":{\"name\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"67 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS45951.2020.9128314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9128314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

开发的22FFL技术用于3.3V工作，用于研究将技术能力扩展到12 V应用所需的工艺和设计考虑因素。在密切考虑低压元件的技术可靠性要求的情况下，精心设计了原型芯片，以展示产品级可靠性能力。晶体管、井结、后端电介质和mimcap等组件的可靠性在10年的使用寿命内得到了充分的表征和证明。结果证明了一种可靠的技术能力，符合工业标准，能够满足高压设计要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology

The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量