S. Seo, Chih-Chao Yang, C. Yeh, B. Haran, D. Horak, S. Fan, C. Koburger, D. Canaperi, S. P. Papa Rao, F. Monsieur, A. Knorr, A. Kerber, Chao-Kun Hu, J. Kelly, T. Vo, J. Cummings, Matthew Smalleya, K. Petrillo, S. Mehta, S. Schmitz, T. Levin, Dae-gyu Park, J. Stathis, T. Spooner, V. Paruchuri, J. Wynne, D. Edelstein, D. Mcherron, B. Doris
{"title":"22纳米及以上的铜接触金属化","authors":"S. Seo, Chih-Chao Yang, C. Yeh, B. Haran, D. Horak, S. Fan, C. Koburger, D. Canaperi, S. P. Papa Rao, F. Monsieur, A. Knorr, A. Kerber, Chao-Kun Hu, J. Kelly, T. Vo, J. Cummings, Matthew Smalleya, K. Petrillo, S. Mehta, S. Schmitz, T. Levin, Dae-gyu Park, J. Stathis, T. Spooner, V. Paruchuri, J. Wynne, D. Edelstein, D. Mcherron, B. Doris","doi":"10.1109/IITC.2009.5090326","DOIUrl":null,"url":null,"abstract":"We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM [1]. Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Copper contact metallization for 22 nm and beyond\",\"authors\":\"S. Seo, Chih-Chao Yang, C. Yeh, B. Haran, D. Horak, S. Fan, C. Koburger, D. Canaperi, S. P. Papa Rao, F. Monsieur, A. Knorr, A. Kerber, Chao-Kun Hu, J. Kelly, T. Vo, J. Cummings, Matthew Smalleya, K. Petrillo, S. Mehta, S. Schmitz, T. Levin, Dae-gyu Park, J. Stathis, T. Spooner, V. Paruchuri, J. Wynne, D. Edelstein, D. Mcherron, B. Doris\",\"doi\":\"10.1109/IITC.2009.5090326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM [1]. Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. Cu contact metallization allowed us to demonstrate world's smallest and fully functional 22 nm node 6T-SRAM [1]. Cu contact metallization was executed using CVD Ru-containing liner. We obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction and gate leakage currents and overlap capacitance were stable after BEOL anneal stress. We also demonstrated the extendibility of Cu contact metallization using 15 nm contacts.
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