A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S. Ryu, J. Palmour, S. Balachandran, T. Chow, S. Bayne, B. Geil, C. Scozzie, K. Jones
{"title":"1600v, 20a, SiC双极结晶体管的发展","authors":"A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S. Ryu, J. Palmour, S. Balachandran, T. Chow, S. Bayne, B. Geil, C. Scozzie, K. Jones","doi":"10.1109/ISPSD.2005.1488003","DOIUrl":null,"url":null,"abstract":"SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2 .","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors\",\"authors\":\"A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S. Ryu, J. Palmour, S. Balachandran, T. Chow, S. Bayne, B. Geil, C. Scozzie, K. Jones\",\"doi\":\"10.1109/ISPSD.2005.1488003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2 .\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1488003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1488003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors
SiC power BJTs have been developed over the last five years into a sufficiently mature technology (1-5). The reliability and applications of these devices are now being studied. This paper summarizes the evolution of this development culminating into the most recent performance of the 1600 V, 20 A devices with a current gain of 40 in the linear region, a forced current gain of 27 in the saturation region and a specific on-resistance of 4.5 mohm-cm 2 .
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
