用于探测半导体器件中噪声陷阱之间耦合的统计工具，应用于SiGe hbt中的1/f噪声

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398182

J. Johansen, Y. Birkelund, Z. Jin, J. Cressler

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引用次数: 3

摘要

本文分析了商用硅锗异质结双极晶体管基极电流中的随机电报信号噪声。我们使用高阶统计量来测试噪声信号中频率分量之间的非线性耦合。我们将时间序列分解成一个多电平随机电报信号(RTS)和剩余的噪声。发现随机电报信号与洛伦兹1/f/sup / 2/形谱有关。结果表明，所发现的非线性耦合与随机电报信号部分的噪声直接相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A statistical tool for probing the coupling between noisy traps in semiconductor devices, with application to 1/f noise in SiGe HBTs

We have analyzed random telegraph signal noise in the base current of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) from a commercial SiGe HBT technology. We use higher order statistics to test for non-linear coupling between frequency components in the noise signal. We have decomposed the time series into a multilevel random telegraph signal (RTS) and the remaining noise. The random telegraph signal is found to contribute with Lorentzian 1/f/sup 2/-shaped spectra. We show that the non-linear coupling found is directly connected to the random telegraph signal part of the noise.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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