QFN封装的模垫分层

C. Chiew, Paing Samsun, L. Vigneswaran, A. Ang
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引用次数: 1

摘要

在半导体工业中有许多采用不同晶片设计的QFN封装ic。由于晶片尺寸和芯片尺寸比的最小差异,这将继续在相同的封装尺寸下最大化封装功能,但具有吸引力的成本封装ic。然而,不同的晶片尺寸与晶片比导致不同的应力水平,从而导致不同的封装分层程度。不要错过制造过程及其工具结构所产生的应力,这些应力会导致包装分层。一般来说,有两种类型的压力;拉应力和剪切应力。与热致应力相比,机械故障引起的应力相关分层更容易解决。热诱发应力的根本原因可能涉及到集成电路生产线上的多个热处理工艺。为了克服由于热应力造成的分层,可能需要改变包装设计或物料清单(BOM)。本文首先对受模垫分层影响的封装设计进行了热模拟。结果证实,在受影响的模垫区域存在高热应力,并观察到高翘曲。这导致了翘曲的改进活动,翘曲是由不同的热处理工艺引起的。对不同热处理工艺(模焊、丝焊和模具工艺)的翘曲行为进行了统计研究。结果表明,模垫层脱层与贴模过程中的高热处理工艺有关。为了证明其失效机理,对不同热处理温度下的模具进行了统计研究。数据证明,在贴模过程中采用低温法消除了模垫分层现象。为了成功地消除模垫分层,在贴模过程中需要在低热处理温度下将锡膏替换为胶料(与锡膏相同的CTE)。组装零件后,用胶水设计成贴合模具的封装工艺表征,没有发现模具垫分层现象。随着大规模生产的确认,贴模工艺的低热温度是解决受影响封装的模垫分层的成功方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Die Pad Delamination on QFN Package
There are many QFN packaged ICs with different die pad design widely used in semiconductor industry. With minimum delta on die pad size and chip size ratio, this will continue maximize the package functionality in same package size, yet attractive cost packaged ICs. However, a different die pad size to chip ratio lead to different stress level to building part which resulted different delamination level in package. Not to miss out the stress created by manufacturing process with its tool construction which cause delamination to package in addition. In general, there are 2 types of stress; tensile stress and shear stress. It is easy to tackle the stress related delamination to mechanical faulty compare to thermal induced stress. The root cause of thermal induced stress may involve more than one heat treatment's processes imposed on ICs manufacturing line. A change of package design or bill of material (BOM) may be incurred to overcome the delamination due to thermal resulted stress. In this paper, a thermal simulation was carried out firstly on affected package design impacted with die pad delamination. The result confirms that high thermal stress was localised on affected die pad area with addition high warpage observed. This was lead to improvement activities on warpage, which was caused by different heat treatment process. A statistical study on warpage behaviour was conducted to different heat treatment process (die bonded, wire bonded and mold process). Result showed that die pad delamination was related to high heat treatment process at die attached process. To prove the failure mechanism, different heat treatment temperature on die attached was statistically studied. Data was proven that die pad delamination eliminated by low heat temperature in die attached process. To make a success on die pad delamination elimination, a replacement from solder paste to glue material (same CTE as solder paste) is required during die attached process with low heat treatment temperature. After building part, glue designed into package with die attached process characterization, no die pad delamination found. With the big scale production confirmation, low heat temperature at die attached process is a proven solution on die pad delamination in success for affected package.
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