拓扑霍尔效应中的相干后向散射

Hong Liu, Rhonald Burgos Atencia, N. Medhekar, D. Culcer
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引用次数: 1

摘要

近年来,电子输运和磁性之间的相互作用引起了相当大的关注,主要是由于电操纵磁性自由度的策略,如自旋轨道力矩和畴壁运动。在该场中,源于标量自旋手性的拓扑霍尔效应是由实空间非均匀磁织构引起的带间量子相干性的一个例子,其大小取决于建立系统总拓扑电荷的绕组数和手性自旋特征。值得注意的是,在拓扑霍尔效应发现后的二十年里,还没有关于拓扑霍尔效应量子修正的研究。在这里,我们将证明,与普通的霍尔效应不同,自旋织构引起的不均匀磁化将在动力学方程中给出额外的散射项,从而导致拓扑霍尔电阻率的量子修正。我们专注于二维系统,其中弱局部化是最强的,并确定了复杂的梯度修正库珀和动力学方程。然而,在目前已知的材料中,拓扑霍尔效应的弱局域化校正并不大,我们表明它在稀磁半导体中是实验观察到的。我们的理论结果将刺激拓扑霍尔效应的实验,并填补横向输运弱局域化修正的理论知识空白。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Coherent backscattering in the topological Hall effect
The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and domain wall motion. Within this field the topological Hall effect, which originates from scalar spin chirality, is an example of inter-band quantum coherence induced by real-space inhomogeneous magnetic textures, and its magnitude depends on the winding number and chiral spin features that establish the total topological charge of the system. Remarkably, in the two decades since its discovery, there has been no research on the quantum correction to the topological Hall effect. Here we will show that, unlike the ordinary Hall effect, the inhomogeneous magnetization arising from the spin texture will give additional scattering terms in the kinetic equation, which result in a quantum correction to the topological Hall resistivity. We focus on 2D systems, where weak localization is strongest, and determine the complicated gradient corrections to the Cooperon and kinetic equation. Whereas the weak localization correction to the topological Hall effect is not large in currently known materials, we show that it is experimentally observable in dilute magnetic semiconductors. Our theoretical results will stimulate experiments on the topological Hall effect and fill the theoretical knowledge gap on weak localization corrections to transverse transport.
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