{"title":"采用45nm CMOS技术，具有5dB NF和16dB转换增益的ka波段射频前端","authors":"Hyunki Jung, Dzuhri Radityo Utomo, Saebyeok Shin, Seok-Kyun Han, Sang-Gug Lee, Jusung Kim","doi":"10.1109/ISOCC.2018.8649986","DOIUrl":null,"url":null,"abstract":"This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.","PeriodicalId":127156,"journal":{"name":"2018 International SoC Design Conference (ISOCC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology\",\"authors\":\"Hyunki Jung, Dzuhri Radityo Utomo, Saebyeok Shin, Seok-Kyun Han, Sang-Gug Lee, Jusung Kim\",\"doi\":\"10.1109/ISOCC.2018.8649986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.\",\"PeriodicalId\":127156,\"journal\":{\"name\":\"2018 International SoC Design Conference (ISOCC)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC.2018.8649986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2018.8649986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology
This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm2 active area.
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