{"title":"接地体SOI (GBSOI) nMOSFET的界面阱密度和掺杂密度分析","authors":"Jong-Son Lyu, W. Kang, H. J. Yoo","doi":"10.1109/SOI.1995.526471","DOIUrl":null,"url":null,"abstract":"Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D/sub it/ and N/sub A/ of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D/sub it/ and N/sub A/ of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D/sub it/ and N/sub A/ of the sidewall channel were about 1.6/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/ and 7/spl times/10/sup 14/ cm/sup -3/ respectively. These values are an order of magnitude larger and smaller than those of the main channel.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET\",\"authors\":\"Jong-Son Lyu, W. Kang, H. J. Yoo\",\"doi\":\"10.1109/SOI.1995.526471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D/sub it/ and N/sub A/ of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D/sub it/ and N/sub A/ of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D/sub it/ and N/sub A/ of the sidewall channel were about 1.6/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/ and 7/spl times/10/sup 14/ cm/sup -3/ respectively. These values are an order of magnitude larger and smaller than those of the main channel.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET
Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D/sub it/ and N/sub A/ of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D/sub it/ and N/sub A/ of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D/sub it/ and N/sub A/ of the sidewall channel were about 1.6/spl times/10/sup 11/ eV/sup -1/ cm/sup -2/ and 7/spl times/10/sup 14/ cm/sup -3/ respectively. These values are an order of magnitude larger and smaller than those of the main channel.
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