三维顺序集成低温栅堆工艺步骤可靠性分析

A. Tsiara, X. Garros, C-M. V. Lu, C. Fenouillet-Béranger, P. Batude, R. Gassilloud, F. Martin, O. Faynot, G. Ghibaudo, G. Reimbold
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引用次数: 0

摘要

在本研究中,我们研究了低温栅堆工艺流程中一些步骤的影响,这是三维顺序集成所必需的。这些是:高k层的氮化,氮化后的退火温度,最后是后端形成气体。利用时间相关缺陷光谱,我们可以评估预先存在的陷阱对栅极堆叠质量(可靠性)的影响,该结果表明,由于它们都具有低温掺杂激活过程,因此在分裂之间没有重大差异。然而,通过应用负偏置温度不稳定性测量,我们观察到随着N2/H2氮化的分裂,我们有一个小的等效氧化物厚度和低降解的最佳折衷。同时,我们发现在两种渗氮后退火温度之间的应力影响没有差异。这样我们就能转移到更低的温度。最后,使用氘作为后端形成气体,对于一些主要的工艺步骤,我们可以有一套指导方针,以实现高性能和低降解,这是未来规模化所必需的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability analysis on low temperature gate stack process steps for 3D sequential integration
In this study we investigate the effect of some of the steps during a low temperature gate stack process flow, necessary for 3D sequential integration. These are: the nitridation of the high-k layer, the post nitridation annealing temperature and finally, the back end forming gas. Using Time Dependent Defect Spectroscopy, we could evaluate the impact of pre-existing traps on the quality of the gate stack (t0 reliability) which shows no major differences between the splits, since they all have a low temperature dopant activation process. However, by applying Negative Bias Temperature Instability measurements, we observe that with the split of N2/H2 nitridation, we have the best compromise of a small Equivalent Oxide Thickness and a low degradation. At the same time we see no difference at the stress impact between the two Post Nitridation Anneal temperatures. In that way we are able to move to lower temperatures. Finally, using the Deuterium as a back end forming gas we can have a set of guidelines, for some of the major process steps, to achieve high performance and low degradation, necessary for future scaling.
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