{"title":"光滑表面硅微机械器件的加工技术进展","authors":"H. Guckel, J. Sniegowski, T. Christenson","doi":"10.1109/MEMSYS.1989.77964","DOIUrl":null,"url":null,"abstract":"The use of fine-grained polysilicon in the development of micromechanical devices (e.g. bearings, with smooth surfaces) is discussed. Fine-grained polysilicon can be produced with surface roughness near 8 AA r.m.s. (root mean square). The ability to anneal films of this type into tension eliminates size restrictions which are caused by compressive buckling. The use of these films in micromechanical devices has been restricted because hydrogen-fluoride-etched structures are covered by an etch residue which leads to contact welding. Contact between opposing surfaces is induced mainly by surface tension effects. This problem can be avoided by removing the deflection mechanism. Thus, freezing of a water-methanol rinse after sacrificial etching all but eliminates surface tension. Removal of the ice mixture via sublimation at 0.15 mbar occurs readily. Free-standing structures with smooth surfaces and small gaps are then passivated by silicon nitride deposition or other techniques.<<ETX>>","PeriodicalId":369505,"journal":{"name":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","volume":"14 38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":"{\"title\":\"Advances in processing techniques for silicon micromechanical devices with smooth surfaces\",\"authors\":\"H. Guckel, J. Sniegowski, T. Christenson\",\"doi\":\"10.1109/MEMSYS.1989.77964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of fine-grained polysilicon in the development of micromechanical devices (e.g. bearings, with smooth surfaces) is discussed. Fine-grained polysilicon can be produced with surface roughness near 8 AA r.m.s. (root mean square). The ability to anneal films of this type into tension eliminates size restrictions which are caused by compressive buckling. The use of these films in micromechanical devices has been restricted because hydrogen-fluoride-etched structures are covered by an etch residue which leads to contact welding. Contact between opposing surfaces is induced mainly by surface tension effects. This problem can be avoided by removing the deflection mechanism. Thus, freezing of a water-methanol rinse after sacrificial etching all but eliminates surface tension. Removal of the ice mixture via sublimation at 0.15 mbar occurs readily. Free-standing structures with smooth surfaces and small gaps are then passivated by silicon nitride deposition or other techniques.<<ETX>>\",\"PeriodicalId\":369505,\"journal\":{\"name\":\"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'\",\"volume\":\"14 38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"42\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1989.77964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Micro Electro Mechanical Systems, , Proceedings, 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1989.77964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
摘要
细粒多晶硅在微机械设备(如轴承,表面光滑)的发展中的应用进行了讨论。细粒多晶硅可以生产表面粗糙度接近8 AA r.m.s.(均方根)。将这种类型的薄膜退火成张力的能力消除了由压缩屈曲引起的尺寸限制。这些薄膜在微机械装置中的使用受到限制,因为氟化氢蚀刻结构被蚀刻残留物覆盖,导致接触焊接。相对表面之间的接触主要是由表面张力效应引起的。这个问题可以通过移除偏转机构来避免。因此,在牺牲蚀刻后冷冻水-甲醇冲洗几乎消除了表面张力。在0.15毫巴的温度下通过升华很容易除去冰混合物。具有光滑表面和小间隙的独立结构然后通过氮化硅沉积或其他技术钝化。
Advances in processing techniques for silicon micromechanical devices with smooth surfaces
The use of fine-grained polysilicon in the development of micromechanical devices (e.g. bearings, with smooth surfaces) is discussed. Fine-grained polysilicon can be produced with surface roughness near 8 AA r.m.s. (root mean square). The ability to anneal films of this type into tension eliminates size restrictions which are caused by compressive buckling. The use of these films in micromechanical devices has been restricted because hydrogen-fluoride-etched structures are covered by an etch residue which leads to contact welding. Contact between opposing surfaces is induced mainly by surface tension effects. This problem can be avoided by removing the deflection mechanism. Thus, freezing of a water-methanol rinse after sacrificial etching all but eliminates surface tension. Removal of the ice mixture via sublimation at 0.15 mbar occurs readily. Free-standing structures with smooth surfaces and small gaps are then passivated by silicon nitride deposition or other techniques.<>