双极和JFET晶体管的抗辐射电压参考

2015 IEEE 8th GCC Conference & Exhibition Pub Date : 2015-02-01 DOI:10.1109/IEEEGCC.2015.7060065

E. I. Starchenko, N. Prokopenko, P. Budyakov

{"title":"双极和JFET晶体管的抗辐射电压参考","authors":"E. I. Starchenko, N. Prokopenko, P. Budyakov","doi":"10.1109/IEEEGCC.2015.7060065","DOIUrl":null,"url":null,"abstract":"This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.","PeriodicalId":127217,"journal":{"name":"2015 IEEE 8th GCC Conference & Exhibition","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The radiation-hardened voltage references on bipolar and JFET transistors\",\"authors\":\"E. I. Starchenko, N. Prokopenko, P. Budyakov\",\"doi\":\"10.1109/IEEEGCC.2015.7060065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.\",\"PeriodicalId\":127217,\"journal\":{\"name\":\"2015 IEEE 8th GCC Conference & Exhibition\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 8th GCC Conference & Exhibition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEEGCC.2015.7060065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 8th GCC Conference & Exhibition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEEGCC.2015.7060065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文综述了利用npn型和pJFET晶体管基极构建温度稳定电压基准的电路方法。新的电压参考电路被建议用于BiFET技术，这使得制造辐射硬度高达1 Mrad和F=1013 ÷ 1014 n/cm2的微电子产品成为可能，许多应用都可以接受。

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The radiation-hardened voltage references on bipolar and JFET transistors

This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=1013 ÷ 1014 n/cm2 acceptable for many applications.

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2015 IEEE 8th GCC Conference & Exhibition

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