C. Lee, S.K. Park, J.-K. Kim, S.-H Kim, S.J. Kwon, H.-W Kim, Yuchul Hwang, Y. Park
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Improving the NBTI characteristics of long-channel PMOSFETs by short channel with source underlap structure
Recently long-channel PMOS transistors are being used in delay circuits to increase delay time. Negative Bias Temperature Instability (NBTI) has channel length dependency which shows that long-channel devices degrade more than short channel devices. We suggest a source underlap structure with short channel transistor to solve this problem. We confirmed the short-channel device with underlap structure shows improved NBTI characteristics compared to normal long-channel device through a device simulation.
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