在H/sup +/注入Si中制备SOI硅片的薄硅层分层——分层硅层的基本现象和性质

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786121

T. Hara

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摘要

本文综述了H/sup +/注入硅层中薄硅层的分层现象。采用少数载流子寿命技术测量了器件硅层的层性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Delamination of thin Si layer in the H/sup +/ implanted Si for the manufacture of SOI Si wafer-fundamental phenomena and the properties of the delaminated Si layers

This paper reviews the delamination of thin Si layer in H/sup +/ implanted Si layers. Layer properties of the device Si layer were measured by minority carrier lifetime technique.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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