两种不同技术实现的sram覆盖开口iddt测试效率的比较

14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems Pub Date : 2011-04-13 DOI:10.1109/DDECS.2011.5783118

G. Gyepes, J. Brenkus, D. Arbet, V. Stopjaková

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引用次数: 5

摘要

本文讨论了动态电源电流(iddt)测试方法，其中监测了iddt波形的几个参数。在两个64位SRAM电路上进行了仿真，研究了其中的阻性开路缺陷。采用0.35µm和90 nm CMOS技术。对两种技术的iddt测试覆盖开放性缺陷的效率进行了评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of iddt test efficiency in covering opens in SRAMs realised in two different technologies

The paper deals with dynamic supply current (iddt) test method, where several parameters of the iddt waveform have been monitored. Simulations were performed on two 64-bit SRAM circuits, in which resistive open defects were investigated. The technologies used were 0.35 µm and 90 nm CMOS. The efficiency of iddt test in covering open defects for both technologies was evaluated.

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14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems

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