{"title":"基于5块集成p-n结的矩阵光接收器光谱选择光电池的光电过程","authors":"E. Denisova, V. I. Khainovskii, V. V. Uzdovskii","doi":"10.1109/EDM.2009.5174022","DOIUrl":null,"url":null,"abstract":"Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions\",\"authors\":\"E. Denisova, V. I. Khainovskii, V. V. Uzdovskii\",\"doi\":\"10.1109/EDM.2009.5174022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.\",\"PeriodicalId\":262499,\"journal\":{\"name\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2009.5174022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5174022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions
Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.