内置自测试软错误强化扫描单元

S. Holst, Ruijun Ma, X. Wen, Aibin Yan, Hui Xu
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引用次数: 0

摘要

确保安全关键系统内现代VLSI电路的正确运行至关重要,因为现代技术节点更容易受到早期寿命故障(ELFs)和辐射引起的软错误(SEs)的影响。解决这两个挑战会导致相互矛盾的设计要求:有效的现场ELF检测需要在线监测或定期内置自我测试,并具有良好的细胞内部缺陷覆盖率。然而,se强化锁存器设计的可测试性较差,因为它们的设计是为了掩盖细胞内部的故障。我们提出了BiSTAHL,这是一种新的se强化扫描单元设计,可以对生产缺陷和elf进行完全内置的自测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BiSTAHL: A Built-In Self-Testable Soft-Error-Hardened Scan-Cell
Ensuring the correct operation of modern VLSI circuits within safety-critical systems is essential since modern technology nodes are more susceptible to Early-Life Failures (ELFs) and radiation-induced Soft-Errors (SEs). Tackling both of these challenges leads to contradicting design requirements: Effective in-field ELF detection requires online-monitoring or periodic built-in self-testing with excellent cell-internal defect coverage. SE-hardened latch designs, however, are less testable because they are designed to mask cell-internal failures. We propose BiSTAHL, a new SE-hardened scan-cell design that is fully built-in self-testable for both production defects and ELFs.
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